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GaAs wafer

Product Detail Information

Helios provides single crystal GaAs wafer to optoelectronics and microelectronics industry, in diameter range from 2" to 4". LEC and VGF are two main growth method providing the widest choice of GaAs material. Gallium Arsenide can be supplied as ingots and polished wafers, with two different conductive types, semi-conducting and semi-insulating. The epi-ready wafer is available for MOCVD and MBE application. 


Semi-conducting GaAs Specifications

Growth Method: VGF

Dopant: Si (n-type) AND Zn (p-type)

Wafer Shape: Round (DIA: 2inch, 3inch, 4inch and 6inch)

Surface Orientation*: (100)+/-0.5°

*Other Orientations maybe available upon request