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SiC Wafer

Product Detail Information

Regular specification of SiC Wafer             

Polytype: 6H-SiC/ 4H-SiC

Crystal Structure: Hexagonal

Orientation: on axis <0001>

Conductivity Type: N-type

Dopant: N2 (Nitrogen)

Diameter: 2 inch

Thickness: 330 um

Resistivity: 0.03 ~ 0.12 ohm-cm

Surface finish: Si face polished

TTV: max 10 um

Bandgap: 3.02 eV / 3.1 eV

Micropipe Density: max 200 cm -2

Product Detail Image

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